Experimental dangling-bond band on the Ge(111)-(2×1) surface

Abstract
The electronic structure of the cleaved Ge(111)-(2×1) surface has been studied with angle-resolved photoemission, with the use of photons in the energy range 7.4-11.6 eV. Similar to the Si(111)-(2×1) surface, the dominating structure in the emission corresponds to a highly dispersive dangling-bond surface state. The initial-state energy, as a function of momentum parallel to the surface Ei(k) for this surface state, is presented along the Γ¯J¯K¯Γ¯ lines in the (2×1) surface Brillouin zone.