NMR Study on Heavily Doped Silicon. II
- 1 December 1975
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 39 (6), 1492-1497
- https://doi.org/10.1143/jpsj.39.1492
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- NMR Study on Heavily Doped Silicon. IJournal of the Physics Society Japan, 1974
- Piezoresistance and Magnetic Susceptibility in Heavily Dopedn-Type SiliconJournal of the Physics Society Japan, 1968
- Effects of Electron-Electron Interactions on Nuclear Spin-Lattice Relaxation Rates and Knight Shifts in Alkali and Noble MetalsPhysical Review B, 1968
- Electric Conduction in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1967
- High-Stress Piezoresistance in Degenerate Arsenic-Doped GermaniumPhysical Review B, 1965
- Negative Magnetoresistance in the Metallic Impurity Conduction of n-Type GermaniumJournal of the Physics Society Japan, 1965
- The Effect of Electron-Electron Interaction on the Nuclear Spin Relaxation in MetalsJournal of the Physics Society Japan, 1963
- Theory of Localized Spins and Negative Magnetoresistance in the Metallic Impurity ConductionJournal of the Physics Society Japan, 1962
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958
- ON THE TRANSITION TO METALLIC CONDUCTION IN SEMICONDUCTORSCanadian Journal of Physics, 1956