Laser reordering of implanted amorphous layers in GaAs
- 28 February 1978
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (2), 485-488
- https://doi.org/10.1016/0038-1101(78)90285-x
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Thick sample analysis by ion induced X-raysNuclear Instruments and Methods, 1978
- Silicon solar cells by high-speed low-temperature processingIEEE Transactions on Electron Devices, 1977
- Reordering of implanted amorphous layers in gaasRadiation Effects, 1977
- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974