Composition profiles and growth kinetics of GaxIn1−xP LPE layers: Experiments and theoretical approach
- 1 May 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 53 (2), 413-417
- https://doi.org/10.1016/0022-0248(81)90091-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Liquid phase epitaxial growth of lattice-matched GaP-Ga0.5Al0.5P-GaP layer under controlled phosphorus vapor pressure and reduced oxygen contaminationJournal of Crystal Growth, 1979
- Computer simulation of solution growth of ternary III–V alloysJournal of Crystal Growth, 1977
- Croissance épitaxique en phase liquide de GaxIn1-xpRevue de Physique Appliquée, 1976
- Embedded heterostructure epitaxy: A technique for two-dimensional thin-film definitionApplied Physics Letters, 1975
- Crystal and luminescence properties of constant-temperature liquid-phase-expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx (x [inverted lazy s]0.4)Journal of Applied Physics, 1973
- Liquid phase epitaxial growth of GaxIn1−xPJournal of Electronic Materials, 1972
- Phase equilibria and vapor pressures of the system In+PThe Journal of Chemical Thermodynamics, 1970