Evidence for mobility domains in (100) silicon inversion layers
- 30 November 1976
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 20 (7), 677-680
- https://doi.org/10.1016/0038-1098(76)90744-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Surface quantum oscillations in (100) inversion layers under uniaxial stressSolid State Communications, 1976
- Effects of higher sub-band occupation in (100) Si inversion layersPhysical Review B, 1976
- Disorder-induced carrier localization in silicon surface inversion layersApplied Physics Letters, 1974
- Electron-Electron Interactions Continuously Variable in the RangePhysical Review Letters, 1972
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967