Intersubband absorption in highly strained InGaAs/InAlAs multiquantum wells
- 19 February 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (8), 746-748
- https://doi.org/10.1063/1.102700
Abstract
Highly strained In0.66 Ga0.34 As/In0.30 Al0.70 As multiquantum wells (MQWs) are successfully grown on (001)InP substrates by moleular beam epitaxy. Good crystal quality in the strained MQWs is confirmed by clear excitonic peaks and sharp photoluminescence spectra. Intersubband absorption at a wavelength as short as 3.1 μm was obtained for the first time in uniformly Si-doped strained MQWs.Keywords
This publication has 8 references indexed in Scilit:
- InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ=4.4 μmApplied Physics Letters, 1988
- GaAs/AlGaAs quantum-well, long-wavelength infra-red (LWIR) detector with a detectivity comparable to HgCdTeElectronics Letters, 1988
- Possibility of optical bistability due to resonant intersubband excitation in stepped modulation-doped quantum wellsApplied Physics Letters, 1987
- Nonlinear intersubband optical absorption in a semiconductor quantum wellJournal of Applied Physics, 1987
- Observation of Stark shifts in quantum well intersubband transitionsApplied Physics Letters, 1987
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- Energy band-gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substratesJournal of Applied Physics, 1983
- The electron effective mass in heavily doped GaAsJournal of Physics C: Solid State Physics, 1979