Linewidth enhancement factor for InGaAs/InP strained quantum well lasers
- 1 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (14), 1390-1391
- https://doi.org/10.1063/1.103444
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- InGaAs/InP graded-index quantum well lasers with nearly ideal static characteristicsApplied Physics Letters, 1990
- Linewidth enhancement factor in strained quantum well lasersIEEE Photonics Technology Letters, 1989
- Linewidth enhancement factor in InGaAsP/InP multiple quantum well lasersApplied Physics Letters, 1987
- Nature of wavelength chirping in directly modulated semiconductor lasersElectronics Letters, 1984
- Output power and temperature dependence of the linewidth of single- frequency cw (GaAl)As diode lasersApplied Physics Letters, 1982
- Theory of the linewidth of semiconductor lasersIEEE Journal of Quantum Electronics, 1982