Strained InGaAs/InP quantum well lasers
- 26 March 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (13), 1210-1212
- https://doi.org/10.1063/1.102562
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Critical layer thickness in strained Ga1−xInxAs/InP quantum wellsApplied Physics Letters, 1989
- Enhancement of modulation bandwidth in InGaAs strained-layer single quantum well lasersApplied Physics Letters, 1989
- Reproducible growth of low-threshold single and multiple quantum well InGaAs/InP lasers by a novel interlayer growth techniqueApplied Physics Letters, 1989
- InGaAs-GaAs strained-layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor depositionApplied Physics Letters, 1989
- Excitonic transitions in lattice-matchedquantum wellsPhysical Review B, 1988
- Extremely wide modulation bandwidth in a low threshold current strained quantum well laserApplied Physics Letters, 1988
- Type-I to type-II superlattice transition in strained layers of As grown on InPPhysical Review Letters, 1988
- Electronic energy levels inAs/InP strained-layer superlatticesPhysical Review B, 1987
- Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986