A comparative study of thermal stress induced dislocation generation in pulled GaAs, InP, and Si crystals
- 1 May 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (5), 3331-3336
- https://doi.org/10.1063/1.329154
Abstract
We have extended the recently developed quasisteady‐state heat transfer/thermal stress model for glide dislocation generation in Czochralski pulled GaAs to InP and Si. The calculated results are displayed by means of (a) dislocation density contour lines for {100} wafers and (b) a novel ambient temperature (Ta) stability diagram. The latter representation explicitly shows the progressive elimination of dislocation‐free regions with decreasing Ta in GaAs, InP, and Si. It is predicted that unless the diameter is unusually small (∼1 cm), glide dislocations appear at the periphery of both GaAs and InP grown by LEC at a Ta which is only ∼10 °K below their respective melting points. With decreasing Ta the dislocations rapidly spread throughout the interior. In contrast, an 8‐cm‐diam Si crystal is dislocation‐free even at a Ta about 40 °K below the melting point. At this critical Ta glide dislocations which are confined to the circumference begin to generate. Thus, in accord with current crystal growth experience, Si exhibits a decisive advantage over the compounds in its resistance to thermal stress‐induced slipping. This is likely to be due to the elemental solid’s large critical resolved shear stress and thermal conductivity.Keywords
This publication has 15 references indexed in Scilit:
- An evaluation of the thermal and elastic constants affecting GaAs crystal growthJournal of Crystal Growth, 1980
- The Effect of Dislocations in Ga1 − x Al x As : Si Light‐Emitting DiodesJournal of the Electrochemical Society, 1979
- Stacking fault energy and ionicity of cubic III–V compoundsPhysica Status Solidi (a), 1978
- A preliminary study of dislocations in indium and gallium phosphidesJournal of Materials Science, 1973
- Liquid-seal Czochralski growth of gallium arsenideJournal of Crystal Growth, 1973
- Dislocation-free GaAs by the liquid encapsulation techniqueJournal of Crystal Growth, 1972
- Measurement of Minority Carrier Lifetime in Silicon of Low Dislocation DensityPhysica Status Solidi (b), 1969
- Spontaneous generation of dislocations during growth of silicon single crystalsJournal of Crystal Growth, 1968
- Zur Abhängigkeit der Lebensdauer von der Versetzungsdichte bei tiegelfreien Silizium‐EinkristallenPhysica Status Solidi (b), 1965
- Macroscopic Plastic Properties of Dislocation-Free Germanium and Other Semiconductor Crystals. I. Yield BehaviorJournal of Applied Physics, 1963