A Technique for Predicting Large Signal Performance of a GaAs MESFET
Open Access
- 23 March 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 78, 132-134
- https://doi.org/10.1109/mwsym.1978.1123813
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Modelling of Gunn-domain effects in GaAs m.e.s.f.e.t.sElectronics Letters, 1977
- Modelling the 3rd-order intermodulation-distortion properties of a GaAs f.e.t.Electronics Letters, 1977
- Voltage-current characteristics of GaAs J-FET's in the hot electron rangeSolid-State Electronics, 1970