Epitaxial regrowth of Ar implanted amorphous Si by laser annealing
- 1 May 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (5), 2625-2629
- https://doi.org/10.1063/1.327992
Abstract
The epitaxial regrowth of argon‐implanted self‐implantation‐produced amorphous silicon under Q‐switched ruby laser pulses is reported. It is shown that pulse annealing succeeds in producing epitaxial regrowth in the present case where equilibrium thermal annealing fails. A highly porous layer filled with spherical voids is observed by transmission electron microscopy (TEM). Four‐point probe measurements of the annealed layers exhibit a very high sheet resistance. The electrical properties are explained in terms of the unique microstructure of the pulse annealed layer.Keywords
This publication has 5 references indexed in Scilit:
- Epitaxial regrowth of Ar-implanted amorphous siliconJournal of Applied Physics, 1978
- Redistribution of dopants in ion-implanted silicon by pulsed-laser annealingApplied Physics Letters, 1978
- Grain size dependence in a self-implanted silicon layer on laser irradiation energy densityApplied Physics Letters, 1978
- Direct Measurements of the Surface Energies of CrystalsJournal of Applied Physics, 1960
- Surface Tension at Elevated Temperatures. I. Furnace and Method for Use of the Sessile Drop Method; Surface Tension of Silicon, Iron and NickelThe Journal of Physical Chemistry, 1953