Reactively sputtered a-SixGe1−x:H alloys with compositional gradient in plane of film
- 15 March 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (6), 634-636
- https://doi.org/10.1063/1.94834
Abstract
A reactive sputtering technique has been utilized which enables one to deposit in a single run the alloy system a‐SixGe1−x :H over the range x=0.05–0.7 and survey IR, optical, and electrical transport properties. The technique can readily be generalized to other binary and ternary semiconductor systems.Keywords
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