Accumulation mode Ga0.47In0.53As insulated gate field-effect transistors
- 1 August 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (3), 287-289
- https://doi.org/10.1063/1.94329
Abstract
Preliminary results obtained on enhancement‐type insulated gate field‐effect transistors are described. These are based on the surface accumulation of heteroepitaxially grown Ga0.47In0.53As layers whose residual donor impurities are compensated by deep level Fe acceptors.Keywords
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