Deep level defects in n-type GaN
- 25 July 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (4), 463-465
- https://doi.org/10.1063/1.112337
Abstract
In n‐type GaN grown by metalorganic chemical vapor deposition two new electronic defects were detected and characterized by deep level transient spectroscopy(DLTS). Schottky‐barrier diodes with Ohmic back contacts and low series resistance were fabricated in GaN layers grown on sapphire. The diodes display well behaved current‐voltage and capacitance‐voltage characteristics and permit unambiguous DLTS evaluation. The new deep levels display thermal activation energies for electron emission of 0.49 and 0.18 eV.Keywords
This publication has 14 references indexed in Scilit:
- Schottky barrier photodetector based on Mg-doped p-type GaN filmsApplied Physics Letters, 1993
- Metal semiconductor field effect transistor based on single crystal GaNApplied Physics Letters, 1993
- Conductivity control of GaN and fabrication of UV/blue GaN light emitting devicesPhysica B: Condensed Matter, 1993
- Growth of GaN by ECR-assisted MBEPhysica B: Condensed Matter, 1993
- Thin films and devices of diamond, silicon carbide and gallium nitridePhysica B: Condensed Matter, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayersApplied Physics Letters, 1992
- III-V nitrides for electronic and optoelectronic applicationsProceedings of the IEEE, 1991
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Heteroepitaxial Thermal Gradient Solution Growth of GaNJournal of the Electrochemical Society, 1972