The effect of radiation on the energy resolution of ion-implanted silicon detectors
- 15 June 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 211 (2-3), 363-367
- https://doi.org/10.1016/0167-5087(83)90260-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Annealing of lattice damage in ion implanted siliconRadiation Effects, 1980
- Coherent production of pions on nuclei determination of unstable boson-nucleon total cross sectionsNuclear Physics B, 1971
- Theoretical and Experimental Determinations of Neutron Energy Deposition in SiliconIEEE Transactions on Nuclear Science, 1966
- Radiation Effects of Protons and Electrons in Silicon Diffused-Junction DetectorsIEEE Transactions on Nuclear Science, 1964