Annealing of lattice damage in ion implanted silicon
- 1 January 1980
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 49 (1-3), 133-136
- https://doi.org/10.1080/00337578008243081
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Photoluminescence from Si irradiated with 1.5-MeV electrons at 100 °KJournal of Applied Physics, 1976
- Nitrogen as dopant in silicon and germaniumPhysica Status Solidi (a), 1976
- Recombination luminescence from ion implanted siliconRadiation Effects, 1976
- EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under-uniaxial stressPhysical Review B, 1974
- EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated siliconPhysical Review B, 1974
- New epr spectra in neutron-irradiated silicon (II)Radiation Effects, 1974
- Temperature, stress, and annealing effects on the luminescence from electron-irradiated siliconJournal of Applied Physics, 1973
- Radiation from a beam of modulated electrons. IIApplied Physics Letters, 1972
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967