Ion Implanted Contacts on Cadmium Telluride Detectors
- 1 June 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 19 (3), 358-361
- https://doi.org/10.1109/tns.1972.4326750
Abstract
Cadmium telluride single crystals have been grown by the vertical zone melting technique. Without added chemical impurities, they are generally N-type of 10-100 Ω. cm resistivity. Detectors have been prepared with this material by implanting Bi+ ions. The influence of the implant conditions and annealing treatments were studied. A FWHM of 24 keV has been obtained at 300° and 77° K for 5.5 MeV α-particles.Keywords
This publication has 4 references indexed in Scilit:
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- Improvements in the purification of cadmium telluride by zone refiningJournal of Crystal Growth, 1970
- TYPE CONVERSION AND p-n JUNCTIONS IN n-CdTe PRODUCED BY ION IMPLANTATIONApplied Physics Letters, 1968
- High-Purity CdTe by Sealed-Ingot Zone RefiningJournal of the Electrochemical Society, 1963