Heteroepitaxial growth of CdTe on GaAs by laser assisted deposition
- 1 September 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (5), 462-464
- https://doi.org/10.1063/1.94389
Abstract
The heteroepitaxial growth of (111) CdTe on (100) GaAs substrates has been obtained by laser assisted deposition at 350 °C. Films 5–14 μm thick were characterized by x‐ray diffraction, UV reflectance measurement, and transmission electron microscopy. Results indicate good crystallinity with 105 cm−2 dislocation densities beyond a few microns from the CdTe/GaAs interface.Keywords
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