High output conductance of InAlAs/InGaAs/InP MODFET due to weak impact ionization in the InGaAs channel

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9 December 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1991.235456

Abstract

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Keywords

This publication has 7 references indexed in Scilit:

Characterization of surface-undoped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP high electron mobility transistors
IEEE Transactions on Electron Devices, 1990
W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
IEEE Electron Device Letters, 1990
AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE
IEEE Electron Device Letters, 1989
Subpicosecond InP/InGaAs heterostructure bipolar transistors
IEEE Electron Device Letters, 1989
Parasitic bipolar effects in submicrometer GaAs MESFET's
IEEE Electron Device Letters, 1987
Improved subthreshold characteristics of n-channel SOI transistors
IEEE Electron Device Letters, 1986
Analysis of kink characteristics in Silicon-on-insulator MOSFET's using two-carrier modeling
IEEE Transactions on Electron Devices, 1985

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