Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- 1 April 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (4S)
- https://doi.org/10.1143/jjap.39.2318
Abstract
Hemispherical Si quantum dots have been self-assembled on thermally grown 3.2-nm-thick SiO2/p-Si(100) by low-pressure chemical vapor deposition of silane. The charging states of the Si quantum dots have been detected as surface potential changes by using an atomic force microscopy/Kelvin force probe method. From the relationship between the measured surface potential changes and the charging energy of a single dot, the number of electrons retained in a dot has been estimated to be one. Furthermore, it is found that electron extraction from neutral dots can be achieved to create a hole at each dot.Keywords
This publication has 7 references indexed in Scilit:
- Quantum confinement effect in self-assembled, nanometer silicon dotsApplied Physics Letters, 1998
- Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum DotsJapanese Journal of Applied Physics, 1997
- Resonant tunneling through a self-assembled Si quantum dotApplied Physics Letters, 1997
- A silicon nanocrystals based memoryApplied Physics Letters, 1996
- Si Quantum Dot Formation with Low-Pressure Chemical Vapor DepositionJapanese Journal of Applied Physics, 1996
- Self-Assembling Formation of Silicon Quantum Dots by Low Pressure Chemical Vapor DepositionMRS Proceedings, 1996
- Kelvin probe force microscopyApplied Physics Letters, 1991