Single longitudinal mode operation of two-section GaInAsP/InP lasers under pulsed excitation
- 1 June 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 19 (6), 1057-1062
- https://doi.org/10.1109/jqe.1983.1071989
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
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- Generation of single-longitudinal-mode subnanosecond light pulses by high-speed current modulation of monolithic two-section semiconductor lasersElectronics Letters, 1982
- Low-threshold-current distributed-feedback InGaAsP/InP CW lasersElectronics Letters, 1982
- External cavity controlled single longitudinal mode laser transmitter moduleElectronics Letters, 1981
- Crystallographic facets chemically etched in GaInAsP/InP for integrated opticsElectronics Letters, 1981
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- GaInAsP/InP laser with monolithically integrated monitoring detectorElectronics Letters, 1980
- Power Waves and the Scattering MatrixIEEE Transactions on Microwave Theory and Techniques, 1965