Shape resonances above the Si 2p threshold in SiF4

Abstract

Using monochromatized synchrotron radiation and angle integrated photoelectron spectroscopy, the Si 2p, Si LVV Auger, and F 2s cross sections have been obtained for SiF₄ molecules in the gas phase between 116 and 150 eV photon energies. These cross sections and the Si 2p β value have also been calculated using the MS‐Xα method. There is qualitative agreement between theory and experiment. Together with recent experimental and theoretical Si 2p cross sections from SiCl₄ and valence band cross sections on SiF₄, the two major resonances at 5 and 22 eV kinetic energies are assigned as t₂ resonances. The valence band branching ratios are not affected by interchannel coupling above the Si 2p threshold.