Ion implantation in group III-nitride semiconductors: a tool for doping and defect studies
- 1 June 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 178 (1-2), 157-167
- https://doi.org/10.1016/s0022-0248(97)00076-6
Abstract
No abstract availableKeywords
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