Origin of characteristic grain-subgrain structure of tin-doped indium oxide films
- 1 April 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 259 (1), 38-45
- https://doi.org/10.1016/0040-6090(94)06390-7
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Heteroepitaxial growth of tin-doped indium oxide films on single crystalline yttria stabilized zirconia substratesApplied Physics Letters, 1994
- A microstructural study of low resistivity tin-doped indium oxide prepared by d.c. magnetron sputteringThin Solid Films, 1994
- Microstructure and Electrical Characteristics of Sputtered Indium Tin Oxide FilmsJournal of the Electrochemical Society, 1993
- Mass spectrometric ion analysis in the sputtering of oxide targetsJournal of Vacuum Science & Technology A, 1992
- Electrical and structural properties of low resistivity tin-doped indium oxide filmsJournal of Applied Physics, 1992
- Low resistivity indium–tin oxide transparent conductive films. II. Effect of sputtering voltage on electrical property of filmsJournal of Vacuum Science & Technology A, 1990
- Properties of highly conducting ITO films prepared by ion platingApplied Surface Science, 1988
- Sputter Synthesis of Ba2YCu3Oy As-Deposited Superconducting Thin Films from Stoichiometric Target–A Mechanism of Compositional Deviation and Its ControlJapanese Journal of Applied Physics, 1988
- Electrical and optical properties of In2O3: Sn films prepared by activated reactive evaporationThin Solid Films, 1980
- Production of High-Energy Neutral Atoms by Scattering of Ions at Solid Surfaces and Its Relation to SputteringPhysical Review Letters, 1968