The characteristics of minority-carrier exclusion in narrow direct gap semiconductors
- 30 November 1985
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 25 (6), 729-741
- https://doi.org/10.1016/0020-0891(85)90040-5
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Algorithm for multichannel LMS adaptive filteringElectronics Letters, 1985
- Exclusion Effect in Semiconductors with Non-Injecting ContactsPhysica Status Solidi (a), 1984
- Minority carrier exclusionSolid-State Electronics, 1979
- Carrier concentration of Hg1−xCdxTeJournal of Applied Physics, 1974
- On the Static Characteristics of High-Low Junction Devices†Journal of Electronics and Control, 1962
- Accurate solution of an idealized one-carrier metal-semiconductor junction problemSolid-State Electronics, 1962
- Theory of the Swept Intrinsic StructureBell System Technical Journal, 1956
- Carrier Extraction in GermaniumProceedings of the Physical Society. Section B, 1955
- Carrier extraction in germaniumPhysica, 1954
- The Transport of Added Current Carriers in a Homogeneous SemiconductorPhysical Review B, 1953