Emission wavelength and cavity design dependence of laser behaviour in HgCdTe heterostructures
- 1 February 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 159 (1-4), 613-617
- https://doi.org/10.1016/0022-0248(95)00779-2
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Laser action and photoluminescence in an indium-doped n-type Hg1−xCdxTe (x=0.375) layer grown by liquid phase epitaxyJournal of Applied Physics, 1993
- HgCdTe infrared diode lasers grown by MBESemiconductor Science and Technology, 1993
- Mesa stripe transverse injection laser in HgCdTeApplied Physics Letters, 1992
- Optimum separate confinement structure for midinfrared HgCdTe heterostructure lasersJournal of Applied Physics, 1992
- Room-temperature laser emission near 2 μm from an optically pumped HgCdTe separate-confinement heterostructureJournal of Crystal Growth, 1992
- Carrier lifetimes and threshold currents in HgCdTe double heterostructure and multi-quantum-well lasersJournal of Applied Physics, 1991
- Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxyApplied Physics Letters, 1990
- Photoluminescence and laser action of Hg1−xCdxTe (x≊0.5) layer grown by liquid-phase epitaxyJournal of Applied Physics, 1990
- Optically pumped laser oscillation at ≊2.9 μm of a HgCdTe layer grown by metalorganic chemical vapor depositionApplied Physics Letters, 1989
- DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALSApplied Physics Letters, 1971