Donor identification in bulk gallium arsenide
- 1 February 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (5), 389-391
- https://doi.org/10.1063/1.99475
Abstract
We report identification, by a spectroscopic method, of shallow donors in both epitaxial and bulk gallium arsenide. Identification is achieved using photoluminescence from resonantly excited two‐electron satellites of donor bound exciton lines at 4.2 K in a magnetic field of 9.5 T. Sulfur and a previously unreported lower binding energy donor dominate in liquid‐encapsulated Czochralski‐grown crystals, while S and Si are dominant in the Bridgman‐grown material. Central cell structure is resolved in the (D0,X) lines in a high magnetic field.Keywords
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