Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD
- 15 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 837-840
- https://doi.org/10.1016/s0022-0248(98)00305-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- InGaN Laser Diode Grown on 6H–SiC Substrate Using Low-Pressure Metal Organic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- Growth and characterization of bulk InGaN films and quantum wellsApplied Physics Letters, 1996
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996