Electrical and optical properties of amorphous SixN1−x
- 1 February 1986
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 53 (2), 159-169
- https://doi.org/10.1080/13642818608238982
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Two-Phase Structure of a-Si1-xNx:H Fabricated by Microwave Glow-Discharge TechniqueJapanese Journal of Applied Physics, 1985
- Properties of amorphous semiconducting multilayer films and of alloysPhysical Review B, 1984
- Electronic structure of hydrogenated and unhydrogenated amorphous: A photoemission studyPhysical Review B, 1984
- Photoelectronic properties of amorphous silicon nitride compoundsSolar Energy Materials, 1984
- Anomalous Variations in Conductivity of a-Si: H with Nitrogen DopingJapanese Journal of Applied Physics, 1982
- Wide Optical-Gap, Photoconductive a-SixN1-x:HJapanese Journal of Applied Physics, 1981
- Transport in lithium-doped amorphous siliconfPhilosophical Magazine Part B, 1979
- Amorphous-silicon field-effect device and possible applicationElectronics Letters, 1979
- Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge techniquePhilosophical Magazine, 1977
- Electronic Transport in Amorphous Silicon FilmsPhysical Review Letters, 1970