Wannier exciton in quantum wells
- 15 October 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (8), 4878-4881
- https://doi.org/10.1103/physrevb.28.4878
Abstract
Variational calculations are presented for Wannier excitons in quantum wells for the ground () and the excited ( and ) states, with careful attention to a variety of spatial extensions of these excitons in directions parallel and perpendicular to the well interface. The results are shown to be valid throughout the entire well thickness, corresponding in the thin and the thick limits to two- and three-dimensional situations, respectively.
Keywords
This publication has 5 references indexed in Scilit:
- Binding energies of wannier excitons in GaAs-Ga1−xAlxAs quantum well structuresSolid State Communications, 1983
- Exciton binding energy in quantum wellsPhysical Review B, 1982
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981
- Wannier excitons in a thin crystal filmPhysical Review B, 1979
- On the Relationship between Superconductivity and the Communal Entropy of the Crystal StructureJournal of the Physics Society Japan, 1966