Effect of Deuterium Anneal on SiO2/Si(100) Interface Traps and Electron Spin Resonance Signals of Ultrathin SiO2 Films
- 1 April 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (4B), L569
- https://doi.org/10.1143/jjap.32.l569
Abstract
Anneal kinetics of the SiO2/Si(100) interface defects of 5-nm-thick SiO2 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density D i t . The ESR signal showed two distinct defects (so-called Pb0 and Pb1) at the SiO2/Si(100) interface: These Pb0 and Pb1 defects are annihilated by a low-temperature (500°C) deuterium (D2) anneal. By contrast, the D2 anneal at 900°C causes an increase in the number of the defects after a decrease at the initial stage (< 10 s). We conclude that there are annihilation and dissociation processes causing the Pb0 and Pb1 defects, dependent on the D2 anneal time and temperature.Keywords
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