X and K band ESR study of the Pb Interface centres in thermally oxidized p-type (001)Si wafers at low temperatures and influence of medium-dose As+ ion implantation
- 1 June 1984
- journal article
- Published by Elsevier BV in Surface Science
- Vol. 141 (1), 255-284
- https://doi.org/10.1016/0039-6028(84)90210-3
Abstract
No abstract availableKeywords
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