InAs nanowires and whiskers grown by reaction of indium with GaAs

Abstract

Free-standing InAs nanowires and whiskers were grown employing reaction of indium (In) liquid and vapor with GaAs substrate. The arsenic (As) atoms resulting from this reaction were transported by a flow of ${\mathrm{N}}_2$ or ${\mathrm{NH}}_3$ to the growth location where they reacted with In to produce InAs nanowires and whiskers. Scanning electron microscopy, energy dispersive x-ray spectroscopy, and transmission electron microscopy of the products indicate that the diameter of the nanowires and whiskers ranges from 15 nm to 2 μm depending on the growth temperature, the composition is InAs, and the structure is zinc-blende crystal with [110] or [100] growth direction. The As source and growth mechanism were discussed. The method for synthesis involved no any template, catalyst, toxic As source, nor even lattice matched substrate.