A comparison of hydrogen incorporation and effusion in doped crystalline silicon, germanium, and gallium arsenide
- 1 July 1991
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 53 (1), 47-53
- https://doi.org/10.1007/bf00323434
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Deuterium effusion measurements in doped crystalline siliconJournal of Applied Physics, 1990
- Trap-limited hydrogen diffusion in doped siliconPhysical Review B, 1990
- Hydrogen Passivation of Shallow Acceptors in SiliconPhysica Scripta, 1989
- Lattice Location of Deuterium Interacting with the Boron Acceptor in SiliconPhysical Review Letters, 1988
- Passivation of shallow acceptors by H in Si: A microscopic study by perturbed angular correlationsPhysical Review Letters, 1987
- Evidence for the neutralization of boron in silicon using surface analysis techniquesJournal of Vacuum Science & Technology A, 1987
- Vibrational characteristics of acceptor-hydrogen complexes in siliconApplied Physics Letters, 1987
- Hydrogen passivation of shallow-acceptor impurities inp-type GaAsPhysical Review B, 1986
- Hole-mediated chemisorption of atomic hydrogen in siliconApplied Physics Letters, 1985
- Thermal desorption of gasesVacuum, 1962