Hole-mediated chemisorption of atomic hydrogen in silicon
- 1 October 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (7), 748-750
- https://doi.org/10.1063/1.96026
Abstract
It has been shown that at 120 °C atomic hydrogen diffuses into p-type silicon where it ties to a Si dangling bond near an acceptor. However, a thin n-type surface layer blocks the entry of atomic hydrogen. This demonstrates that free holes in the surface layer are needed to permit the entry of atomic hydrogen.Keywords
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