Correlation effects on the electronic structure of 1 × 1 and 2 × 1 reconstructed Si(111) surfaces
- 15 December 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 24 (12), 7431-7434
- https://doi.org/10.1103/physrevb.24.7431
Abstract
Intra-atomic correlations are shown to lead to two separate occupied dangling-bond bands at the buckled Si(111) surface, in agreement with recent photoemission results. A bandwidth of 0.4 eV and spin-polarized bands are obtained when the atomic and spin periodicities are both 2 × 1. The bandwidths are sensitive to the type of spin ordering at the surface. Nearly dispersionless bands result when the atomic and spin periodicities are 2 × 1 and 1 × 2, respectively. For the nonbuckled surface a metastable, antiferromagnetic structure with a 1.1-eV gap is predicted.Keywords
This publication has 29 references indexed in Scilit:
- Surface states on Si(111)-(2×1)Physical Review B, 1981
- Electronic states of Si(111) surfacesJournal of Vacuum Science and Technology, 1981
- Core-Level Binding-Energy Shifts Due to Reconstruction on the Si(111) 2 × 1 SurfacePhysical Review Letters, 1980
- Geometry-DependentSurface Core-Level Excitations for Si(111) and Si(100) SurfacesPhysical Review Letters, 1980
- Electronic structure of Si(111) surfacesSurface Science, 1980
- Geometrical and electronic structure of Si(001) and Si(111) surfaces: A status reportJournal of Vacuum Science and Technology, 1980
- An investigation of thin silver films on cleaved silicon surfacesJournal of Physics C: Solid State Physics, 1979
- Surface states on Si (111) 2 × 1 detected by external reflectivitySolid State Communications, 1978
- Measurement of the Angle of Dangling-Bond Photoemission from Cleaved SiliconPhysical Review Letters, 1974
- Optical Absorption of Surface States in Ultrahigh Vacuum Cleaved (111) Surfaces of Ge and SiPhysical Review B, 1971