Planarized copper gate hydrogenated amorphous-silicon thin-film transistors for AM-LCDs
- 1 March 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (3), 129-131
- https://doi.org/10.1109/55.748910
Abstract
We report the first fabrication of inverted-staggered back-channel-etch hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with a planarized Cu gate electrode. The Cu gate-planarized (GP) a-Si:H TFTs, incorporating benzocyclobutene and a-SiN/sub x/:H as a double-layer gate insulator, had a field-effect mobility of 0.75 cm/sup 2//V-s, a threshold voltage of 4.92 V, and a subthreshold swing (S) of 0.48 V/dec. These results demonstrate that the GP-TFTs can have an electrical performance comparable with the conventional TFTs without gate planarization. Thus, the gate planarization technology is suitable for application in large-area and high-resolution active-matrix liquid-crystal displays.Keywords
This publication has 6 references indexed in Scilit:
- Self-passivated copper gates for amorphous silicon thin-film transistorsIEEE Electron Device Letters, 1997
- A six-mask TFT-LCD process using copper-gate metallurgyJournal of the Society for Information Display, 1997
- Limitations and prospects of a‐Si:H TFTsJournal of the Society for Information Display, 1995
- Electrical Properties of Amorphous Silicon Transistors and MIS‐Devices: Comparative Study of Top Nitride and Bottom Nitride ConfigurationsJournal of the Electrochemical Society, 1993
- High-Mobility and High-Stability a-Si:H Thin Film Transistors with Smooth SiNx/a-Si InterfaceJapanese Journal of Applied Physics, 1991
- Ferrite-Plating in Aqueous Solution: A New Method for Preparing Magnetic Thin FilmJapanese Journal of Applied Physics, 1983