Photoemission and band-structure results for Ni
- 15 June 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (12), 7598-7602
- https://doi.org/10.1103/physrevb.25.7598
Abstract
Photoemission measurements on bulk Ni are interpreted on the basis of linear augmented-plane-wave band-structure calculations. The emerging picture describes Ni as a "noble-metal" compound, consisting of a metallic, simple cubic silicon crystal which is stabilized by Ni anions.
Keywords
This publication has 17 references indexed in Scilit:
- Interface and surface structure of epitaxial NiSi2 filmsApplied Physics Letters, 1981
- Stoichiometric and Structural Origin of Electronic States at theSi-Si InterfacePhysical Review Letters, 1981
- Experimental and theoretical band-structure studies of refractory metal silicidesPhysical Review B, 1981
- Chemical bonding and electronic structure ofSiPhysical Review B, 1980
- XPS study of the chemical structure of the nickel/silicon interfaceJournal of Vacuum Science and Technology, 1980
- Interfacial order in epitaxial NiSi2Applied Physics Letters, 1980
- Interfacial Reaction and Schottky Barrier in Metal-Silicon SystemsPhysical Review Letters, 1980
- Microscopic Compound Formation at the Pd-Si(111) InterfacePhysical Review Letters, 1979
- Review of binary alloy formation by thin film interactionsJournal of Vacuum Science and Technology, 1979
- Semiconductor Charge Densities with Hard-Core and Soft-Core PseudopotentialsPhysical Review Letters, 1979