Diffusant impurity-concentration profiles in thin layers on silicon
- 31 October 1962
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 5 (5), 331-339
- https://doi.org/10.1016/0038-1101(62)90114-4
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961
- On the Determination of Diffusion Coefficient of Boron in SiliconJournal of the Physics Society Japan, 1960
- Calculation of concentration profiles and surface concentration from sheet-conductance measurements of diffused layersSolid-State Electronics, 1960
- Diffused Junction Depletion Layer CalculationsBell System Technical Journal, 1960
- Diffusion of Boron into SiliconJournal of Applied Physics, 1960
- Diffusion of Gallium in SiliconJournal of Applied Physics, 1958
- Measurement of Sheet Resistivities with the Four-Point ProbeBell System Technical Journal, 1958
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
- Hall Mobility of Electrons and Holes in SiliconPhysical Review B, 1954