Mechanisms for annealing of ion-bombardment-induced defects on Pt(111)
- 1 June 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (16), 11609-11611
- https://doi.org/10.1103/physrevb.41.11609
Abstract
The morphology of a Pt(111) crystal during bombardment with 600-eV ions has been investigated at constant temperatures with thermal-energy atom scattering. Below ≲600 K the formation of three-dimensional (3D) structures is observed, while above ≳700 K the removal proceeds layer by layer. From the quantitative modeling of the data we infer that 3D structures develop when annealing proceeds only by intralayer diffusion of vacancies, while layer-by-layer removal is observed when interlayer mass transport also becomes effective. The latter process is believed to be related to the onset of meandering (roughening) of atomic steps.
Keywords
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