Room-temperature CW operation of GaAs-AlGaAs diode lasers on silicon-on-insulator wafers
- 1 April 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (4), 289-291
- https://doi.org/10.1109/68.82089
Abstract
GaAs-AlGaAs diode lasers have been fabricated on silicon-on-insulator wafers for the first time. Gain-guided graded-index separate-confinement heterostructure single-quantum-well (GRINSCH-SQW) lasers operated CW at room temperature with threshold current as low as 43 mA, differential quantum efficiency as high as 54%, and output power of more than 60 mW/facet. One device operated CW for 75 min at an output power of 1 mW/facet.Keywords
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