Description of the bias dependent overlap capacitance at LDD MOSFETs for circuit applications
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 493-496
- https://doi.org/10.1109/iedm.1993.347303
Abstract
An analytical charge description for the bias dependent overlap regions at MOSFETs with LDD(S) configuration for circuit applications is presented. Furthermore an indirect method for the extraction of the LDD(S) parameters is derived. By simulating a fundamental amplifier circuit, it is demonstrated, that an incorrect description of the bias dependent overlap capacitances of LDD MOSFETs can have a profound effect on simulation results.<>Keywords
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