Free and bound exciton decay in indium phosphide
- 30 September 1972
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 11 (5), 721-724
- https://doi.org/10.1016/0038-1098(72)90494-2
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Ground-State Energy of an Exciton-Donor Complex Calculated in a "Two-Polaron Model"Physical Review Letters, 1971
- Far-infrared photoconductivity from the shallow donors in n-InPSolid State Communications, 1971
- Energy Levels of Direct Excitons in Semiconductors with Degenerate BandsPhysical Review B, 1971
- Electron mobilities and photoluminescence of solution grown indiumphosphide single crystalsJournal of Physics and Chemistry of Solids, 1970
- Identification of exciton-neutral donor complexes in the photoluminescence of high purity GaAsSolid State Communications, 1970
- Bound exciton luminescence in epitaxial Sn-doped gallium-arsenideJournal of Luminescence, 1970
- Photoluminescence of InPJournal of Luminescence, 1970
- Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAsPhysical Review B, 1968
- Exciton-Donor Complexes in SemiconductorsPhysical Review B, 1967
- Exciton Absorption and Emission in InPPhysical Review B, 1964