Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (1), 16-18
- https://doi.org/10.1109/55.289476
Abstract
We demonstrate high-speed InAs/AlSb-based heterostructure field-effect transistors (HFET's) displaying greatly improved charge control properties and enhanced high-frequency gate performance. Microwave devices with a 0.5/spl times/84 /spl mu/m/sup 2/ exhibit a peak unity current gain cut-off frequency of f/sub T/=93 GHz. The HFET usable operational range was extended to V/sub DS/=1.5 V (from V/sub DS/=0.4-0.5 V) thus greatly enhancing the applicability of InAs/AlSb-based HFET's for low-power, high-frequency amplification. We also report on the bias dependence of f/sub T/, and demonstrate that InAs/AlSb-based HFET's offer an attractive frequency performance over an adequately wide range of drain biases.Keywords
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