Gate oxynitride grown in nitric oxide (NO)
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Gate oxynitride was grown in NO for the first time. This approach can provide a tight N accumulation near the Si/SiO/sub 2/ interface. Much lower thermal budget is required for an NO process than an N/sub 2/O process to produce an oxynitride with useful properties. Submicron MOSFET's with NO oxynitride showed superior current drive characteristics and comparable hot carrier immunity to those with N/sub 2/O oxynitride.<>Keywords
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