Electric Break through in N-Channel Si Inversion Layer Tilted from (100) Surface
- 1 October 1978
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 45 (4), 1427-1428
- https://doi.org/10.1143/jpsj.45.1427
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Electric break-through in an inversion layer: Exactly solvable modelSolid State Communications, 1978
- Valley-Valley Splitting in Inversion Layers on a High-Index Surface of SiliconPhysical Review Letters, 1978
- Theory of Valley Splitting in anN-Channel (100) Inversion Layer of Si I. Formulation by Extended Zone Effective Mass TheoryJournal of the Physics Society Japan, 1977
- Influence of a One-Dimensional Superlattice on a Two-Dimensional Electron GasPhysical Review Letters, 1977
- Valley splitting in an n-channel (100) inversion layer on p-type siliconSurface Science, 1976
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent BondPhysical Review B, 1965