Different bonding states of Cs and O on highly photoemissive GaAs by flash−desorption experiments
- 1 February 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (3), 111-113
- https://doi.org/10.1063/1.88083
Abstract
The thermal desorption of Cs and O from GaAs/Cs/O activated to negative electron affinity occurs as atomic Cs133 and (mostly) Ga2O. Flash−desorption experiments show that several bonding states exist for the adsorbed Cs which correlate with changes in work function. For example, (i) the Cs bonding state for GaAs/Cs changes when the Cs coverage exceeds that required for maximum photoemission, and (ii) the distribution of bonding states for Cs shifts markedly to higher energies as the GaAs surface passes from unactivated (GaAs/Cs) to activated (GaAs/Cs/O).Keywords
This publication has 10 references indexed in Scilit:
- LEED, Auger and plasmon studies of negative electron affinity on Si produced by the adsorption of Cs and OSurface Science, 1973
- Structural and electronic model of negative electron affinity on the Si/Cs/O surfaceSurface Science, 1973
- Electronic properties of clean cleaved {110} GaAs surfacesSurface Science, 1971
- A Molecular Beam Cesium Source for Photoemission ExperimentsReview of Scientific Instruments, 1971
- Pyrometric Measurements of Si, Ge, and GaAs Wafers Between 100° and 700°CJournal of Applied Physics, 1966
- Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron DiffractionIBM Journal of Research and Development, 1965
- Thermal desorption of gasesVacuum, 1962
- Use of a Silver Tube to Admit Oxygen to a Vacuum SystemReview of Scientific Instruments, 1959
- The Evaporation of Atoms, Ions and Electrons from Caesium Films on TungstenPhysical Review B, 1933
- VAPOR PRESSURES, EVAPORATION, CONDENSATION AND ADSORPTIONJournal of the American Chemical Society, 1932