A sensitive and inexpensive signal analyser for deep level studies

Abstract
A simple and inexpensive instrument for deep level transient spectroscopy (DLTS) is described. When used with a pulse generator and a capacitance meter, it permits studies of defects in semiconductor junctions. A detection limit NT/ND of about 10-5 is obtained, where NT is the concentration of the deep level impurity and ND that of the shallow level dopant. The rate window is easy to change over more than three decades for determination of activation energies. Additional features are included for measurement of carrier capture cross sections. Examples of measurements are given.