Diffusion of Cd acceptors in InP and a diffusion theory for III-V semiconductors

Abstract

In the interest of developing InP technology for optoelectronic devices, we report a method of diffusing Cd into InP using CdP₂ and P as the source. The method provides an acceptor concentration p=10¹⁸–10¹⁹ cm⁻³, a diffusion depth controllable by the amount of P used in the source, and a steep diffusion front suitable to the formation of abrupt p‐n junctions. We have also analyzed kinetics of diffusion and present a theory which explains the anomalous behavior of diffusion profiles observed in the experiments.