Preparation and properties of CuInS2 thin films produced by exposing sputtered Cu-In films to an H2S atmosphere

Abstract

CuInS₂ thin films have been made from copper, indium, and hydrogen sulfide gas using a two‐step technique which involves exposing Cu‐In films produced by sputtering pure copper and pure indium to H₂S gas diluted with argon. X‐ray diffraction, Auger electron spectroscopy, optical transmission, and electrical measurements were used to identify and characterize the CuInS₂. The resulting films were all p type with resistivity in the range 0.1–500 Ω cm and showed a preferred orientation of the (112) plane parallel to the substrate.